FZ1800R17HP4B29BOSA2

$1,100.46

Description：IGBT MODULE 1700V 1800A
Series：IHM-B

SKU:13acb596e655 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 1800A
Series：IHM-B
Mfr：Infineon Technologies
Package：Bulk,Tray
IGBT Type：Trench Field Stop
Configuration：Single Switch
Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 1.8kA
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-IHMB190
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：1800 A
Power - Max：11500 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：145 nF @ 25 V

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FZ1800R17HP4B29BOSA2

Overview

The FZ1800R17HP4B29BOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a collector-emitter voltage (VCES) of 1700 V, a nominal continuous DC collector current (IC nom) of 1800 A at TC = 100°C, and a repetitive peak collector current (ICRM) of 3600 A. The maximum total power dissipation is 11.5 kW. The module operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical VCEsat of 2.25 V at Tvj = 125°C and a forward voltage (VF) of 1.65 V for the diode at 25°C.

Feature Summary

AlSiC base plate construction designed to enhance thermal cycling capability
Emitter controlled diode optimized for regenerative operation
High insulation strength with 4 kV AC isolation and CTI greater than 400

Applications

Resonant inverter applications
High power converters
Traction drives
Wind turbines

Procurement Notes

Verify the specific ordering suffix B29 against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component meets RoHS3 compliance standards as indicated in the datasheet. Ensure the procurement channel provides valid UL approval references matching the E83335 code found on the module label.

Selection Notes

Select this module when high power density and robust thermal cycling are required due to the AlSiC base plate. Verify that the gate drive circuitry supports the specified internal gate resistance and charge requirements. Ensure the cooling system can maintain the case temperature to support the 1800 A nominal current rating under the intended operating conditions.

Part Context

This component belongs to the IHM-B housing series from Infineon Technologies. It integrates Trench/Fieldstop IGBT4 technology with an emitter-controlled diode. The module is designed for industrial applications requiring high reliability and extended operating temperatures up to 150°C.

Replacement Considerations

Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility based solely on voltage and current ratings; verify package dimensions, pinout configuration, and thermal characteristics.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.