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The FZ1800R17HP4_B9 is a single-switch IGBT module utilizing Trench-IGBT4 technology within an IHM-B housing. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1800 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 3600 A for 1 ms pulses. Typical saturation voltage (VCEsat) is 1.90 V at Tvj = 25°C, rising to 2.40 V at Tvj = 150°C. The integrated diode exhibits a typical forward voltage (VF) of 1.80 V at 25°C. Total power dissipation is rated at 11.5 kW at TC = 25°C. Operating junction temperature ranges from -40°C to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical and electrical compliance. Ensure that the component matches the required thermal interface specifications and mounting torque values defined in the application notes. Cross-reference the material content sheet for environmental compliance requirements before finalizing procurement orders.
Select this module based on the 1700 V blocking voltage and 1800 A current rating suitable for industrial traction or high-power inverter applications. Evaluate the thermal resistance parameters (RthJC) to design appropriate heatsinking solutions. Confirm that the gate drive circuitry supports the specified internal gate resistor and charge requirements for optimal switching performance.
This component belongs to the Infineon IGBT4 product family, specifically engineered for high-power applications. It utilizes the standardized IHM-B housing format, which facilitates compatibility with existing evaluation adapter boards and cooling systems designed for this module series. The technology focuses on balancing low saturation voltage with robust short-circuit capability.
Public confirmed substitute part numbers are not available in the provided source material.