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Product Detailed Parameters
- Description：IGBT MODULE
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：2.6V @ 25V, 1800A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-IHVB190
- Voltage - Collector Emitter Breakdown (Max)：4500 V
- Current - Collector (Ic) (Max)：1800 A
- Power - Max：4000000 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：297 nF @ 25 V
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Overview
The FZ1800R45HL4S7BPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 4500 V and a nominal continuous DC collector current (ICDC) of 1800 A at a case temperature of 105 °C. The maximum repetitive peak collector current (ICRM) reaches 3600 A. The module incorporates an AlSiC base plate within the IHM-B housing to enhance thermal cycling capability. Electrical characteristics include a typical collector-emitter saturation voltage (VCE,sat) of 2.15 V at 25 °C and a gate threshold voltage (VGEth) of 6 V.
Feature Summary
- High short-circuit capability and dynamic robustness
- AlSiC base plate for increased thermal cycling endurance
- Positive temperature coefficient of VCE,sat
- Isolated base plate with high comparative tracking index
Applications
- High-power converters
- Medium-voltage converters
- Power transmission and distribution systems
Procurement Notes
Verify component authenticity by cross-referencing the unique serial number and material number found on the module label against official Infineon records. Ensure compliance with export regulations as indicated by the ECCN classification. Confirm that the specific ordering suffix matches the required technical specifications before finalizing acquisition.
Selection Notes
Select this module for applications requiring high voltage blocking capabilities up to 4500 V and substantial current handling. Consider the thermal resistance values when designing the heatsink interface. Verify that the operating junction temperature remains within the specified -40 °C to 150 °C range under all expected load conditions.
Part Context
This component belongs to the IHM-B series of high-power modules designed for industrial environments. It integrates emitter-controlled diodes alongside the IGBTs. The package provides standardized mounting dimensions compatible with existing high-power converter designs requiring robust insulation coordination and mechanical stability.
Replacement Considerations
Direct replacements must match the 4500 V rating, 1800 A current capacity, and IHM-B housing form factor. Verify pinout compatibility and thermal resistance parameters. Substitutes should offer similar switching characteristics and short-circuit withstand times to ensure system reliability without redesigning the gate drive circuitry.
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCES) is rated at 4500 V at a junction temperature of 150 °C.
Does the module include an integrated NTC thermistor?
No, the datasheet does not list an integrated NTC thermistor for this specific part number.
What is the recommended mounting torque for the M6 screws?
The recommended mounting torque for the M6 screws is between 4.25 Nm and 5.75 Nm.
