FZ2000R33HE4BOSA1

Overview

The FZ2000R33HE4BOSA1 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage of 3300 V and a nominal continuous DC collector current of 2000 A at 150°C junction temperature, with a repetitive peak current capability of 4000 A. The device incorporates an AlSiC base plate for enhanced thermal cycling performance and operates within a junction temperature range of -40°C to 150°C. Key electrical characteristics include a typical saturation voltage of 2.45 V at 25°C and low switching losses.

Feature Summary

• High short-circuit capability and robustness under extreme electrical conditions
• AlSiC base plate construction providing increased thermal cycling endurance
• Low gate charge and reverse transfer capacitance for efficient switching

Applications

• Motor drives
• Traction drives
• UPS systems
• Medium-voltage converters
• Active frontend energy recovery

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm mechanical or material variations. Ensure compliance with export regulations if applicable. Confirm that the component meets the required industrial qualification standards before integration into final designs.

Selection Notes

Select this module for high-power applications requiring 3300 V blocking capability and currents up to 2000 A. Consider the positive temperature coefficient of VCE(sat) for parallel operation stability. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended power dissipation levels.

Part Context

This component belongs to the IHM-B series of high-power modules from Infineon Technologies. It represents the IGBT4-E4 generation, designed specifically for demanding industrial and traction environments where high reliability and power density are critical requirements.

Replacement Considerations

FZ2000R33HE4