FZ2400R12HE4B9HDSA2

$691.64

Description：IGBT MODULE
Series：-

SKU:89c297b02adb Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：Trench Field Stop
Configuration：3 Independent
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 2.4kA
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：3560 A
Power - Max：13500 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：150 nF @ 25 V

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FZ2400R12HE4B9HDSA2

Overview

The FZ2400R12HE4B9HDSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology with an integrated Emitter Controlled 4 diode. It features a maximum collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 2400 A at 100°C case temperature. The typical saturation voltage is 1.75 V at 25°C, while the diode forward voltage is 1.8 V. Packaged in the IHM-B housing, it supports an extended operating junction temperature range from -40°C to 150°C.

Feature Summary

Integrated Emitter Controlled 4 diode for optimized switching performance
Robust IHM-B housing designed for high power density applications
Extended operating junction temperature capability up to 150°C

Applications

High-power converters
Motor drives

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific material or packaging variations. Ensure compatibility with standard thermal interface materials and mounting torque specifications provided in the application notes. Confirm RoHS compliance status through the manufacturer's product qualification reports before finalizing procurement orders.

Selection Notes

Select this component for high-current industrial applications requiring robust short-circuit capability and low switching losses. Evaluate the thermal resistance values relative to the heatsink design to ensure adequate cooling. Consider the internal gate resistor value when designing the gate driver circuit to optimize switching speed and minimize electromagnetic interference during operation.

Part Context

This module belongs to the Infineon IGBT4-E4 family, specifically designed for high-power traction and industrial sectors. It utilizes silicon technology within the IHM-B package format, offering a standardized footprint for integration into large-scale inverter systems. The series is characterized by high reliability and superior DC stability under demanding electrical conditions.