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Product Detailed Parameters
- Description：IGBT MODULE 1200V 3560A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 2400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：3560 A
- Power - Max：13500 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：150 nF @ 25 V
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Overview
The FZ2400R12HE4B9HOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features the IHM-B housing with a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 2400 A at 100°C. The device supports a repetitive peak collector current of 4800 A and operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical saturation voltage of 1.75 V, gate charge of 18.5 µC, and internal gate resistance of 0.98 Ω. Thermal characteristics specify a junction-to-case resistance of 11.0 K/kW for the IGBT and 17.5 K/kW for the diode.
Feature Summary
- Incorporates Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 4 diodes for optimized switching performance.
- Features an IHM-B housing design that provides high power density and robust mechanical construction.
- Includes extended operating temperature capabilities and low switching losses for efficient thermal management.
Applications
- High-power converters
- Motor drives
Procurement Notes
Verify the specific ordering suffix B9HOSA2 against official Infineon documentation to confirm exact material content and compliance status. Ensure compatibility with standard mounting procedures using M6 screws and appropriate torque values. Confirm isolation test voltage requirements match system safety standards before integration.
Selection Notes
Select this component for applications requiring high current handling in a compact industrial package. Evaluate thermal resistance values against heatsink capabilities to ensure junction temperatures remain within safe limits during operation. Consider the internal gate resistance when designing driver circuits to optimize switching speed and minimize electromagnetic interference.
Part Context
This module belongs to the Infineon IHM-B series, designed for high-power industrial applications. It represents part of the broader IGBT4 product family, which emphasizes improved efficiency and reliability through advanced trench fieldstop technology. The series is widely used in demanding power conversion environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout and thermal specifications if considering alternative modules from different manufacturers or other Infineon series.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 4800 A with a pulse duration of 1 ms.
What is the isolation test voltage?
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) of the diode is 1.80 V at a forward current of 2400 A and a junction temperature of 25°C.
