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Product Detailed Parameters
- Description：INSULATED GATE BIPOLAR TRANSISTO
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 2.4kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-IHMB190
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：3550 A
- Power - Max：13500 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：150 nF @ 25 V
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Overview
The FZ2400R12HP4B9NPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 2400 A at 25°C. The device has a typical saturated collector-emitter voltage of 1.75 V and a forward voltage of 1.8 V for the integrated anti-parallel diode, both measured at a junction temperature of 25°C. Packaged in the IHM-B form factor with dimensions of 140 mm by 190 mm, it is designed for industrial power applications requiring high current density.
Feature Summary
- Integrates Trench/Fieldstop IGBT4 technology for optimized switching performance and low conduction losses.
- Features a compact IHM-B package design suitable for high-power density industrial applications.
- Includes an integrated anti-parallel diode to support single-switch configurations.
Applications
- Industrial motor drives
- Medium voltage variable frequency drives
- High-power DC-DC converters
Procurement Notes
Verify the specific suffix B9NPSA1 against official Infineon documentation to confirm exact manufacturing lot codes and compliance status. Ensure that the ordering information matches the required technical specifications before procurement. Cross-reference with authorized distributors to validate authenticity and traceability of the component batch.
Selection Notes
Select this module for applications requiring 1200 V blocking capability and high continuous current handling up to 2400 A. Consider the thermal management requirements associated with the IHM-B package size. Evaluate gate drive compatibility with standard IGBT4 characteristics. Confirm that the system layout accommodates the 140 mm x 190 mm footprint constraints.
Part Context
This component belongs to the Infineon IGBT4 series, which utilizes trench gate technology to improve efficiency compared to previous generations. The IHM-B package is part of a standardized modular family designed for robust mechanical mounting and efficient heat dissipation in industrial power electronics systems.
Replacement Considerations
Direct replacements must match the 1200V/2400A rating and IHM-B package. Verify pinout compatibility and thermal resistance values. Consult Infineon's replacement matrix for qualified alternatives within the IGBT4 portfolio.
