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Product Detailed Parameters
- Description：IGBT MODULE 1700V 2400A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 2400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：2400 A
- Power - Max：15500 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：195 nF @ 25 V
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Overview
The Infineon FZ2400R17HE4B9HOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 2400 A at TC = 100°C. The repetitive peak collector current reaches 4800 A for 1 ms pulses. Typical saturation voltages are 1.95 V at Tvj = 25°C, 2.30 V at 125°C, and 2.35 V at 150°C. Total power dissipation is 15.5 kW at TC = 25°C. Thermal resistance from junction to case is 9.70 K/kW per IGBT and 16.3 K/kW per diode. Operating temperature range spans -40°C to +150°C.
Feature Summary
- High short-circuit capability with 11000 A withstand current
- Extended operating junction temperature up to 150°C
- Robust IHM-B housing with copper base plate
- Low switching losses and low VCEsat
Applications
- High-power converters
- Motor drives
- Traction systems
- Photovoltaic inverters
Procurement Notes
Verify the specific ordering suffix B9HOSA2 against official documentation to confirm exact manufacturing lot or regional compliance variations. Confirm RoHS status and REACH SVHC declarations directly with the manufacturer before finalizing procurement specifications.
Selection Notes
Ensure adequate cooling capacity to maintain junction temperatures within the specified 150°C limit during high-current operation. Verify gate drive voltage levels match the ±15 V recommendation for optimal switching performance and minimize dynamic losses in the application circuit design.
Part Context
This component belongs to the Infineon IHM-B series of high-power IGBT modules. It utilizes advanced IGBT4 trench fieldstop technology designed for industrial applications requiring high current density and robust thermal performance in demanding power conversion environments.
Replacement Considerations
FZ2400R17HP4_B9
FAQ
What is the maximum short-circuit withstand current?
The module can withstand a short-circuit current of 11000 A for up to 10 µs at Tvj = 150°C.
What is the isolation test voltage?
The module supports an isolation test voltage of 4.0 kV RMS for 1 minute at 50 Hz.
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) is 1.80 V at Tvj = 25°C, increasing to 2.20 V at Tvj = 150°C under rated current conditions.
