FZ2400R17HE4B9NPSA1

FZ2400R17HE4B9NPSA1

$706.55
  • Description:INSULATED GATE BIPOLAR TRANSISTO
  • Series:-

SKU:04d30da39525 Category: Brand:

  
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Product Detailed Parameters

  • Description:INSULATED GATE BIPOLAR TRANSISTO
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Single Switch
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 2.4kA
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):2400 A
  • Power - Max:15500 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:195 nF @ 25 V

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FZ2400R17HE4B9NPSA1

Overview

The FZ2400R17HE4B9NPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a maximum collector-emitter voltage of 1700 V and a continuous collector current of 2400 A at 25°C. The typical collector-emitter saturation voltage is 1.9 V, with a power dissipation rating of 15.5 kW. Operating within a temperature range of -40°C to +150°C, this silicon-based component is designed for high-power industrial applications requiring robust switching performance.

Feature Summary

  • Utilizes Trench/Fieldstop IGBT4 technology for optimized switching characteristics
  • Designed as a single-switch configuration for high-current handling
  • Capable of managing continuous currents up to 2400 A
  • Rated for high voltage operations up to 1700 V

Applications

  • Industrial motor drives
  • High-power inverter systems
  • Medium-voltage drive applications

Procurement Notes

Verify the specific suffix NPSA1 against official Infineon documentation to confirm package type and pinout compatibility. Ensure that thermal interface materials and mounting hardware meet the mechanical requirements for chassis or board integration. Cross-reference export restrictions if applicable, as some high-power semiconductor components may require additional documentation for international shipping depending on origin and destination regulations.

Selection Notes

Select this module when designing systems requiring high current capacity combined with medium voltage blocking capabilities. The IGBT4 technology offers a balance between conduction losses and switching speed suitable for industrial frequencies. Consider the thermal management solution carefully, given the 15.5 kW power dissipation rating, to ensure junction temperatures remain within the specified operational limits during peak load conditions.

Part Context

This component belongs to Infineon's high-power IGBT module portfolio, specifically leveraging the IGBT4 generation. It is part of a series of modules designed for demanding industrial environments where reliability and efficiency are critical. The single-switch topology distinguishes it from half-bridge or full-bridge configurations, making it suitable for specific circuit topologies requiring independent control of high-current paths.

Replacement Considerations

Publicly confirmed substitute part numbers for FZ2400R17HE4B9NPSA1 are not available in the provided reference data. Verify electrical parameters and mechanical dimensions against potential alternatives such as other variants within the FZ2400R17 series before substitution.

FZ2400R17HE4B9NPSA1FZ2400R17HE4B9NPSA1
$706.55
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