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The FZ2400R17HP4B29BOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode. It features a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 2400 A at 100°C case temperature, with a repetitive peak current capability of 4800 A. The module incorporates an AlSiC base plate for enhanced thermal cycling resistance and provides 4 kV AC insulation. Total power dissipation reaches 15.5 kW at 25°C. Operating junction temperatures range from -40°C to 150°C.
Verify the specific ordering suffix B29 against official Infineon documentation to confirm exact manufacturing specifications. Confirm compliance with RoHS directives and REACH regulations prior to integration. Ensure that mounting torque requirements for M6 screws fall within the specified 4.25 to 5.75 Nm range during assembly procedures.
Select this component for high-power industrial and traction applications requiring robust thermal performance. The AlSiC base plate offers superior thermal cycling endurance compared to standard copper base plates. Evaluate gate resistor values carefully, as switching losses vary significantly with internal gate resistance settings under different load conditions.
This module belongs to the IHM-B housing series designed for high-current applications. It represents part of Infineon's Trench/Fieldstop IGBT4 product line, engineered for high reliability and low saturation voltage. The module integrates both the IGBT switch and the anti-parallel diode into a single compact package for efficient inverter designs.
FZ2400R17HP4_B28BOSA2 is documented as a parameter equivalent substitute.