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The Infineon FZ2400R17HP4B2BOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 2400 A at TC = 100°C, with a repetitive peak collector current (ICRM) of 4800 A. The typical collector-emitter saturation voltage (VCE sat) is 2.25 V at Tvj = 125°C. The module incorporates an AlSiC base plate for enhanced thermal cycling capability and provides 4 kV AC insulation. Operating junction temperature ranges from -40°C to 150°C.
Verify the specific ordering suffix B2 against official documentation to confirm exact component configuration. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the full part number with the latest datasheet revision to validate all electrical parameters before finalizing orders.
Select this module for high-power applications requiring robust thermal performance and high short-circuit capability. The AlSiC base plate makes it suitable for environments demanding high thermal cycling endurance. Verify that the system design accommodates the 1700 V rating and 2400 A continuous current requirements while maintaining appropriate cooling solutions for the specified thermal resistance values.
This component belongs to the IHM-B series of high-power IGBT modules from Infineon Technologies. The series is designed for industrial and traction applications, offering reliable operation across extreme temperatures. The FZ2400R17HP4 variant specifically targets high-performance inverters where high current density and efficient switching are critical for overall system efficiency and compactness.
Publicly confirmed substitute part numbers are not available in the provided source material.