FZ2400R17HP4B9HOSA2

$864.59

Description：PP, IHM I, XHP 1,7KV
Series：*

SKU:b5a964154158 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：PP, IHM I, XHP 1,7KV
Series：*
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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FZ2400R17HP4B9HOSA2

Overview

The Infineon FZ2400R17HP4_B9 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 2400 A at TC = 100°C, with a repetitive peak collector current (ICRM) of 4800 A. The typical collector-emitter saturation voltage (VCEsat) is 1.9 V at Tvj = 25°C. Total power dissipation reaches 15.5 kW at TC = 25°C. The module operates within a junction temperature range of -40°C to 150°C and includes an integrated diode with a forward voltage (VF) of 1.8 V at 25°C.

Feature Summary

Soft-switching Trench-IGBT4 technology for low conduction losses
High short-circuit capability up to 11000 A
Robust IHM-B housing with copper baseplate
Extended operation temperature up to 150°C

Applications

High-power converters
Motor drives

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure compatibility with standard mounting procedures and thermal interface materials specified in application notes. Confirm RoHS compliance status through manufacturer certificates before finalizing procurement orders.

Selection Notes

Select this component for high-power industrial applications requiring robust switching performance. Evaluate thermal resistance values and stray inductance parameters during circuit design. Ensure gate drive circuits accommodate the specified peak voltage limits and internal gate resistor characteristics for optimal switching behavior.

Part Context

This part belongs to the Infineon IHM-B module series, designed for high-power density applications. It utilizes silicon-based IGBT4 technology combined with a field-stop structure. The module integrates both an IGBT switch and a freewheeling diode in a single package, suitable for inverter topologies.