FZ250R65KE3NPSA1

Overview

The FZ250R65KE3NPSA1 is a single-switch IGBT module from the Infineon IGBT3-E3 series, rated for 6500 V and 250 A continuous collector current. It integrates an emitter-controlled diode and utilizes Trench/Fieldstop technology. The module features an AlSiC base plate for enhanced thermal cycling capability and provides high insulation with a 10.4 kV AC isolation voltage. Key electrical parameters include a maximum collector-emitter voltage of 6500 V, a typical saturation voltage of 3.0 V at 25 °C, and a storage temperature range down to -55 °C.

Feature Summary

• Highly insulated design with extended creepage and clearance distances
• AlSiC base plate construction for improved thermal cycling robustness
• Trench/Fieldstop IGBT3 technology combined with emitter-controlled diodes

Applications

• Medium-voltage converters
• Traction drives

Procurement Notes

Verify the specific ordering suffix NPSA1 against official documentation to confirm exact packaging or material specifications. Ensure compliance with export regulations if applicable. Confirm that the component meets the required industrial qualification standards such as IEC 60747 and IEC 60068 before integration into final systems.

Selection Notes

Select this module for applications requiring high voltage blocking capabilities up to 6500 V and significant current handling. Consider the thermal resistance values and the necessity for an AlSiC base plate when designing heatsinking solutions. Verify gate drive requirements against the specified internal gate resistor and threshold voltages for optimal switching performance.

Part Context

This component belongs to the Infineon IGBT3-E3 family, designed for industrial and traction applications. It represents a highly insulated single-switch configuration within the broader portfolio of medium-voltage power modules offered by the manufacturer.

Replacement Considerations

FZ250R65KE3