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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FZ300R12KE3GHOSA1 is a single IGBT module from Infineon's 62mm C-series, utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency Diode. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 480 A at 25°C. The module has a total power dissipation of 1450 W and operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, an internal gate resistance of 2.5 Ω, and an input capacitance of 21 nF. Thermal resistance from junction to case is 0.085 K/W for the IGBT and 0.15 K/W for the diode.
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure that the component matches the required technical specifications for your application before procurement. Cross-reference datasheet revision numbers to guarantee compatibility with existing designs.
Select this module based on its 1200 V rating and 480 A continuous current capability. Consider the thermal management requirements given the specified junction-to-case thermal resistance. Evaluate the switching losses and gate charge characteristics to ensure compatibility with the intended drive circuitry and operating frequency.
This component belongs to Infineon's 62mm C-series lineup, which combines Trench/Fieldstop IGBT3 technology with high-efficiency diodes. The series is engineered for high reliability and performance in demanding power electronics environments, offering a compact form factor with established thermal and electrical characteristics.
Consult official replacement lists for direct substitutes. Verify pinout compatibility and electrical ratings when considering alternative part numbers from the same or different manufacturers.
The maximum repetitive peak collector current is 600 A for a pulse duration of 1 ms.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.
The typical turn-on energy loss per pulse is 25.0 mJ at a junction temperature of 25°C, with IC = 300 A, VCE = 600 V, and RGon = 2.4 Ω.