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The FZ3600R12HP4HOSA2 is a single-switch silicon IGBT module from the Infineon IHM-B series. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 4930 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 2.05 V at 3600 A with a gate-emitter voltage of 15 V. Maximum power dissipation is rated at 19000 W, with an input capacitance of 225 nF at 25 V. Operating temperature ranges from -40°C to +150°C.
Verify the complete part number including the HOSA2 suffix against official Infineon documentation to ensure correct configuration. Confirm RoHS compliance status and specific datasheet revisions prior to ordering. Cross-reference electrical parameters with system requirements to validate suitability for the intended application environment.
Select this component based on its 1200 V rating and 4930 A current capacity. Ensure the cooling solution supports the 19000 W power dissipation limit. Verify that the PCB or busbar layout accommodates the module's physical dimensions and mounting hole pattern for secure mechanical attachment.
This module belongs to the Infineon IGBT4 family, utilizing trench field-stop technology. It is part of the broader FZ3600R12HP4 product line, distinguished by specific manufacturing or packaging variations indicated by the suffix. It serves as a core switching element in high-power semiconductor assemblies.
Direct substitutes include FZ3600R12HP4 and FZ3600R12KE3. Verify pinout compatibility and thermal resistance values before substitution. Ensure the alternative part meets the same voltage and current ratings for equivalent performance.