FZ3600R17HE4PHPSA1

FZ3600R17HE4PHPSA1

$1,139.37
  • Description:IGBT MODULE 1700V 7200A
  • Series:-

SKU:d2871096923a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT MODULE 1700V 7200A
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Single Switch
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 3600A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):7200 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:295 nF @ 25 V

Download product information

FZ3600R17HE4PHPSA1

Overview

The FZ3600R17HE4PHPSA1 is a single-switch IGBT module from Infineon's IHM-B series, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a copper base plate and pre-applied thermal interface material. The device supports a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 3600 A at 70°C. Key electrical parameters include a typical VCEsat of 1.95 V at 25°C and a forward voltage of 1.80 V for the diode. Thermal resistance from junction to heatsink is 9.85 K/kW for the IGBT and 16.4 K/kW for the diode. The module operates within a temperature range of -40°C to +150°C.

Feature Summary

  • Incorporates fast Trench/Fieldstop IGBT4 technology with low switching losses and low saturation voltage.
  • Features an Emitter Controlled Diode (ECD) optimized for inverter applications.
  • Includes pre-applied thermal interface material to simplify assembly.
  • Provides high insulation strength with 4 kV AC isolation and a CTI greater than 400.

Applications

  • High power converters
  • Motor drives

Procurement Notes

Verify the specific suffix PHPSA1 against official documentation to confirm the inclusion of pre-applied thermal interface material and exact packaging configuration. Ensure that the ordering code matches the required technical specifications before finalizing procurement orders.

Selection Notes

Select this module for high-power industrial applications requiring robust short-circuit capability and extended operating temperatures up to 150°C. Consider the 6 nH stray inductance and internal gate resistor values when designing the gate drive circuitry for optimal switching performance.

Part Context

This component belongs to the Infineon IHM-B (IGBT High-Power Modules) family, designed for extreme reliability in demanding environments. The series covers currents from 500 A to 3600 A and voltages from 1200 V to 4500 V, utilizing various topologies including single switch configurations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for cross-referencing alternatives.

FZ3600R17HE4PHPSA1FZ3600R17HE4PHPSA1
$1,139.37
Buy Now