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The FZ3600R17HE4PHPSA1 is a single-switch IGBT module from Infineon's IHM-B series, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a copper base plate and pre-applied thermal interface material. The device supports a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 3600 A at 70°C. Key electrical parameters include a typical VCEsat of 1.95 V at 25°C and a forward voltage of 1.80 V for the diode. Thermal resistance from junction to heatsink is 9.85 K/kW for the IGBT and 16.4 K/kW for the diode. The module operates within a temperature range of -40°C to +150°C.
Verify the specific suffix PHPSA1 against official documentation to confirm the inclusion of pre-applied thermal interface material and exact packaging configuration. Ensure that the ordering code matches the required technical specifications before finalizing procurement orders.
Select this module for high-power industrial applications requiring robust short-circuit capability and extended operating temperatures up to 150°C. Consider the 6 nH stray inductance and internal gate resistor values when designing the gate drive circuitry for optimal switching performance.
This component belongs to the Infineon IHM-B (IGBT High-Power Modules) family, designed for extreme reliability in demanding environments. The series covers currents from 500 A to 3600 A and voltages from 1200 V to 4500 V, utilizing various topologies including single switch configurations.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for cross-referencing alternatives.