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The Infineon FZ3600R17HP4B2BOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode. It features a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 3600 A at 100°C case temperature, with a repetitive peak current capability of 7200 A. The module incorporates an AlSiC base plate to enhance thermal cycling robustness and provides 4 kV AC insulation for one minute. Operating junction temperatures range from -40°C to +150°C, supporting high-power density applications.
Verify the specific B2 suffix against official documentation to confirm material or packaging variations. Confirm that the AlSiC base plate requirements align with your thermal interface design. Ensure mounting torque specifications are strictly followed during installation to maintain reliable electrical contact and prevent mechanical failure.
Select this component when high current capacity and robust thermal cycling performance are required. The extended operating temperature range supports diverse environmental conditions. Evaluate the low saturation voltage characteristics against system efficiency targets. Consider the high short-circuit capability for protection circuit design simplicity.
This module belongs to the IHM-B housing series, designed for high-power industrial applications. It represents part of Infineon's Trenchstop IGBT4 portfolio, which balances switching losses and conduction losses. The single-switch configuration allows flexible integration into various inverter topologies requiring high current handling capabilities.
Public confirmed substitute part numbers: FZ3600R17HP4_B2, FZ3600R17HP4.