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The FZ400R17KE4HOSA1 is a single IGBT module from Infineon's Trenchstop IGBT4 - E4 series, utilizing silicon technology. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 400 A at TC = 100°C, with a maximum of 550 A at TC = 25°C. The repetitive peak collector current (ICRM) reaches 800 A for 1 ms pulses. The typical collector-emitter saturation voltage (VCEsat) is 1.95 V at Tvj = 25°C. Total power dissipation (Ptot) is rated at 2500 W at TC = 25°C. The junction-to-case thermal resistance (RthJC) is 0.06 K/W per IGBT and 0.08 K/W per diode. Operating temperature ranges from -40°C to +150°C.
Verify the specific ordering suffix HOSA1 against official documentation to confirm RoHS compliance and material declarations. Confirm that the component matches the exact datasheet revision required for your application. Ensure all electrical ratings align with your system's operational limits before procurement.
Select this module when a single configuration with 1700 V blocking capability and 400 A nominal current is required. Consider the 62 mm C-Series housing dimensions for mechanical integration. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended power dissipation levels.
This component belongs to the Trenchstop IGBT4 - E4 product family manufactured by Infineon Technologies. It utilizes standard silicon technology within a robust 62 mm C-Series module housing designed for industrial power applications.
Public confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation for potential cross-references or updated series replacements.
The maximum repetitive peak collector current (ICRM) is 800 A for a pulse duration of 1 ms.
The isolation test voltage (VISOL) is 4.0 kV RMS at 50 Hz for 1 minute.
The gate-emitter peak voltage (VGES) is limited to +/-20 V.