FZ400R17KE4HOSA1

FZ400R17KE4HOSA1

$92.44
  • Description:MODULE IGBT 1700V AG-62MM-2
  • Series:C

SKU:3e3fd7a9a910 Category: Brand:

  
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Product Detailed Parameters

  • Description:MODULE IGBT 1700V AG-62MM-2
  • Series:C
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 400A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):550 A
  • Power - Max:2500 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:49 nF @ 25 V

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FZ400R17KE4HOSA1

Overview

The FZ400R17KE4HOSA1 is a single IGBT module from Infineon's Trenchstop IGBT4 - E4 series, utilizing silicon technology. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 400 A at TC = 100°C, with a maximum of 550 A at TC = 25°C. The repetitive peak collector current (ICRM) reaches 800 A for 1 ms pulses. The typical collector-emitter saturation voltage (VCEsat) is 1.95 V at Tvj = 25°C. Total power dissipation (Ptot) is rated at 2500 W at TC = 25°C. The junction-to-case thermal resistance (RthJC) is 0.06 K/W per IGBT and 0.08 K/W per diode. Operating temperature ranges from -40°C to +150°C.

Feature Summary

  • Incorporates Trench/Fieldstop IGBT4 technology combined with an emitter-controlled diode for optimized switching performance.
  • Features an isolated base plate design with high creepage and clearance distances for enhanced safety in demanding environments.
  • Provides extended operation temperature range and low saturation voltage characteristics.

Applications

  • High-power converters
  • Motor drives
  • UPS systems
  • Wind turbines

Procurement Notes

Verify the specific ordering suffix HOSA1 against official documentation to confirm RoHS compliance and material declarations. Confirm that the component matches the exact datasheet revision required for your application. Ensure all electrical ratings align with your system's operational limits before procurement.

Selection Notes

Select this module when a single configuration with 1700 V blocking capability and 400 A nominal current is required. Consider the 62 mm C-Series housing dimensions for mechanical integration. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended power dissipation levels.

Part Context

This component belongs to the Trenchstop IGBT4 - E4 product family manufactured by Infineon Technologies. It utilizes standard silicon technology within a robust 62 mm C-Series module housing designed for industrial power applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation for potential cross-references or updated series replacements.

FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current (ICRM) is 800 A for a pulse duration of 1 ms.

What is the isolation test voltage rating?

The isolation test voltage (VISOL) is 4.0 kV RMS at 50 Hz for 1 minute.

What is the gate-emitter peak voltage limit?

The gate-emitter peak voltage (VGES) is limited to +/-20 V.

FZ400R17KE4HOSA1FZ400R17KE4HOSA1
$92.44
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