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The FZ400R33KL2CB5NOSA1 is a single IGBT module from Infineon Technologies, rated at 3300 V collector-emitter breakdown voltage and 750 A continuous collector current. It delivers a maximum power dissipation of 4900 W and utilizes chassis mount installation. The component features a standard input configuration and is designed for high-voltage industrial applications requiring robust power switching capabilities.
Verify the exact suffix and full part number against official Infineon documentation to ensure compatibility with specific thermal and electrical requirements. Confirm RoHS status and manufacturing origin as specifications may vary by production batch. Cross-reference datasheet parameters such as saturation voltage and thermal resistance before finalizing procurement orders.
Select this module for applications requiring high voltage isolation and substantial current handling capacity. Ensure the cooling system supports the specified 4900 W power dissipation limit. Evaluate the chassis mounting requirements against the mechanical constraints of the target enclosure. Compare performance metrics with alternative modules if lower voltage ratings suffice for the application.
This component belongs to the Infineon IGBT module family, specifically designed for high-power industrial applications. It represents a discrete power semiconductor solution offering reliable switching performance in challenging environments. The module integrates advanced silicon technology to manage high voltages and currents efficiently within compact industrial form factors.
Public confirmed substitute part numbers are not available in the provided data.