FZ400R33KL2CB5NOSA1

FZ400R33KL2CB5NOSA1

  • Description:IGBT MOD 3300V 750A 4900W
  • Series:-

SKU:f7693ccfbb36 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 3300V 750A 4900W
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:3.65V @ 15V, 400A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):3300 V
  • Current - Collector (Ic) (Max):750 A
  • Power - Max:4900 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:48 nF @ 25 V

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FZ400R33KL2CB5NOSA1

Overview

The FZ400R33KL2CB5NOSA1 is a single IGBT module from Infineon Technologies, rated at 3300 V collector-emitter breakdown voltage and 750 A continuous collector current. It delivers a maximum power dissipation of 4900 W and utilizes chassis mount installation. The component features a standard input configuration and is designed for high-voltage industrial applications requiring robust power switching capabilities.

Feature Summary

  • High voltage rating of 3300 V for demanding power systems
  • Single switch topology for simplified circuit design
  • Chassis mount construction for secure mechanical integration

Applications

  • Industrial motor drives
  • High-power inverters
  • Medium voltage power conversion systems

Procurement Notes

Verify the exact suffix and full part number against official Infineon documentation to ensure compatibility with specific thermal and electrical requirements. Confirm RoHS status and manufacturing origin as specifications may vary by production batch. Cross-reference datasheet parameters such as saturation voltage and thermal resistance before finalizing procurement orders.

Selection Notes

Select this module for applications requiring high voltage isolation and substantial current handling capacity. Ensure the cooling system supports the specified 4900 W power dissipation limit. Evaluate the chassis mounting requirements against the mechanical constraints of the target enclosure. Compare performance metrics with alternative modules if lower voltage ratings suffice for the application.

Part Context

This component belongs to the Infineon IGBT module family, specifically designed for high-power industrial applications. It represents a discrete power semiconductor solution offering reliable switching performance in challenging environments. The module integrates advanced silicon technology to manage high voltages and currents efficiently within compact industrial form factors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

FZ400R33KL2CB5NOSA1FZ400R33KL2CB5NOSA1

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