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Product Detailed Parameters
- Description：IGBT MODULE 6500V 500A
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：3.4V @ 15V, 500A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-50°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：6500 V
- Current - Collector (Ic) (Max)：500 A
- Power - Max：2000000 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：135 nF @ 25 V
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Overview
The FZ500R65KE3NOSA1 is a highly insulated single IGBT module utilizing Trench/Fieldstop IGBT3 technology. It features an AlSiC base plate and offers a collector-emitter voltage of 6500 V with a nominal continuous collector current of 500 A at 80 °C case temperature. The device supports a repetitive peak collector current of 1000 A and includes an integrated emitter-controlled diode. Key electrical parameters include a typical saturation voltage of 3.00 V at 25 °C, a maximum operating junction temperature of 125 °C, and a storage temperature range down to -55 °C. The package provides enhanced insulation with a test voltage of 10.4 kV AC for 60 seconds.
Feature Summary
- Highly insulated design with 10.4 kV AC isolation and high creepage distances
- AlSiC base plate construction for improved thermal cycling capability
- Trench/Fieldstop IGBT3 technology combined with emitter-controlled diodes
Applications
- Traction drives
- Medium-voltage converters
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact configuration details. Ensure compliance with export regulations as indicated by the manufacturer. Confirm that the component meets the required industrial qualification standards specified in relevant IEC norms before finalizing procurement.
Selection Notes
Select this module for applications requiring high voltage blocking capabilities and robust thermal performance. Consider the 6500 V rating and 500 A continuous current capacity when designing power circuits. Evaluate the thermal resistance values and mounting torque specifications to ensure proper heat dissipation and mechanical stability within the system architecture.
Part Context
This component belongs to the Infineon IGBT3-E3 series of highly insulated modules. It is designed for industrial and traction applications where high reliability and voltage handling are critical. The module integrates both N-channel IGBTs and anti-parallel diodes in a single package structure.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitute part numbers. Do not assume compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.
