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The FZ600R12KE3HOSA1 is a single IGBT module from Infineon Technologies, part of the Trenchstop IGBT3 - E3 series. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 600 A at 25°C. The saturation voltage is 1.7 V, with a power dissipation rating of 3 kW. Operating within a temperature range of -40°C to +125°C, it utilizes screw mount installation in a 62 mm package.
Verify the exact ordering suffix against official Infineon documentation to ensure correct packaging and RoHS compliance status. Confirm that the HOSA1 designation aligns with specific manufacturing lot requirements or regional regulatory standards before finalizing procurement orders.
Select this component when a single IGBT configuration with 1.2 kV blocking capability and 600 A current handling is required. Ensure the system design accommodates the 1.7 V saturation voltage drop and the specified 3 kW power dissipation limits under expected thermal conditions.
This module belongs to the Trenchstop IGBT3 family, representing an evolution in silicon gate technology. It serves as a standard solution for medium to high-power industrial applications requiring reliable switching characteristics and established thermal performance metrics within the 1200V class.
Direct substitutes include FZ600R12KE4 and FZ600R12KS4. Verify pin compatibility and thermal interface dimensions when transitioning between different generation modules within the same voltage and current ratings.