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The FZ600R12KE4HOSA1 is a single IGBT module from the Infineon 62mm C-Series, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode technology. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 600 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 1200 A for 1 ms pulses. Total power dissipation (Ptot) is rated at 3000 W at TC = 25°C. The junction-to-case thermal resistance (RthJC) is 0.05 K/W for the IGBT and 0.07 K/W for the diode. Operating temperature range spans -40°C to +150°C.
Verify the specific HOSA1 ordering suffix against official Infineon documentation to confirm exact manufacturing details or regional compliance variations. Ensure procurement channels are authorized distributors to guarantee component authenticity and traceability. Cross-reference the datasheet revision date with production batches to align with specific application requirements.
Select this module for applications requiring high current density in a standard 62 mm housing. Evaluate thermal management based on the specified RthJC values and ensure gate drive circuits support the recommended ±15 V operating voltage. Confirm that the system's short-circuit withstand capability aligns with the module's ISC rating of 2400 A.
This component belongs to the Infineon 62mm C-Series, designed for industrial power electronics. It utilizes fourth-generation trench field-stop technology to optimize conduction and switching performance. The module integrates a single IGBT switch with an anti-parallel diode, providing a compact solution for inverter legs in medium-power conversion systems.
Direct replacements within the same series include the FZ600R12KE4. Verify pinout compatibility and thermal interface specifications when substituting. Consult official Infineon cross-reference guides for updated revisions or alternative packages with similar electrical ratings.
The module supports a short-circuit current (ISC) of 2400 A at Tvj = 150°C for pulse durations up to 10 µs.
The module has an isolation test voltage (VISOL) of 4.0 kV RMS for 1 minute at 50 Hz.
At IC = 600 A, VCE = 600 V, and Tvj = 150°C, the typical turn-on energy loss (Eon) is 55.0 mJ.