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The FZ750R65KE3NOSA1 is a single-switch IGBT module from Infineon's IGBT3-E3 series, rated at 6.5 kV and 750 A continuous collector current. It integrates a Trench/Fieldstop IGBT with an emitter-controlled diode in a highly insulated package featuring an AlSiC base plate. Key electrical parameters include a maximum collector-emitter voltage of 6500 V, a typical saturation voltage of 3.0 V at 25°C, and a repetitive peak current capability of 1500 A. The device supports junction temperatures up to 150°C and includes internal isolation with a creepage distance of 64.0 mm.
Verify the specific ordering suffix against official documentation to confirm packaging and compliance details. Ensure that the component meets all relevant industrial qualification standards, including IEC 60747, 60749, and 60068, before integration into final designs.
Select this module for high-voltage applications requiring robust insulation and high thermal stability. Consider the 6.5 kV rating and 750 A current capacity when designing medium-voltage systems. Evaluate the thermal resistance values and mounting torque specifications to ensure proper heat dissipation and mechanical integrity.
This component belongs to the Infineon IGBT3-E3 product family, which utilizes Trench/Fieldstop technology for optimized switching performance. The FZ750R65KE3 variant specifically targets high-power industrial applications, offering a balance of low conduction losses and high voltage blocking capability within a single-switch configuration.
Public confirmed substitute part numbers are not available in the provided documentation.