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The FZ800R12KE3HOSA1 is a single IGBT module from Infineon Technologies, part of the TRENCHSTOP™ IGBT3 - E3 series. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 1600 A at 25°C. The device utilizes silicon technology with a screw mount installation style in an EconoPACK+ package. Key electrical parameters include a typical collector-emitter saturation voltage of 1.7 V and a maximum gate-emitter voltage of ±20 V. The module supports operating temperatures from -40°C to +125°C and has a power dissipation rating of 4.5 kW.
Verify the specific suffix HOSA1 against official datasheets to confirm RoHS compliance status and exact pinout configuration. Ensure that the ordering code matches the required packaging quantity and terminal plating specifications before finalizing procurement orders.
Select this component for applications requiring high current handling up to 1600 A with a 1200 V blocking capability. Evaluate thermal resistance values and ensure the cooling system can handle the 4.5 kW power dissipation. Confirm compatibility with standard gate drive voltages and the mechanical constraints of the EconoPACK+ form factor.
This module belongs to the Infineon IGBT3 - E3 family, which represents a mature generation of silicon IGBTs. It serves as a high-current alternative within the FZ series, offering a balance between cost-effectiveness and performance for medium to high-power industrial applications compared to newer IGBT4 or IGBT5 generations.
Direct replacements may include FZ800R12KE3 or FZ800R12KF4, provided pinouts and thermal characteristics are verified. Cross-referencing with FF800R12KE3 requires careful evaluation of the dual versus single configuration differences.