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The FZ800R12KS4B2NOSA1 is a single IGBT module from Infineon Technologies, rated at 1200 V collector-emitter voltage and 1200 A continuous collector current. It features a maximum power dissipation of 7600 W and utilizes silicon technology. The component operates within a temperature range of -40°C to +125°C and employs screw mount installation. It belongs to the IGBT2 Fast series.
Verify the exact suffix against official Infineon documentation to confirm pinout and thermal interface specifications. Ensure compatibility with existing cooling solutions due to the 7600 W dissipation rating. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement orders.
Select this module for applications requiring high current handling up to 1200 A at 1200 V. Consider the chassis mount style for mechanical stability in heavy-duty environments. Evaluate thermal management requirements given the significant power dissipation capabilities of the device.
This component is part of Infineon's IGBT2 Fast series, designed for robust power switching. It serves as a high-performance alternative to previous generations, offering improved current density and reliability for demanding industrial power electronics applications.
Public confirmed substitute part numbers are not available in the provided source material.