SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FZ800R45KL3B5NOSA2 is a highly insulated IGBT module utilizing Trench/Fieldstop IGBT3 technology and an emitter-controlled diode. It features a collector-emitter voltage (V_CES) of 4500 V and a continuous DC collector current (I_CDC) of 800 A at a case temperature of 80 °C. The repetitive peak collector current reaches 1600 A. The module incorporates an AlSiC base plate for enhanced thermal cycling capability and provides an isolated base plate with high creepage distances. Electrical isolation includes a test voltage of 10.4 kV AC for 60 seconds.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm mechanical pinout, terminal configuration, and insulation class compliance. Ensure that the procurement channel provides original manufacturer packaging to prevent handling damage to the ceramic substrates and aluminum connections during transit.
Select this component for applications requiring high voltage blocking capabilities and significant current handling in industrial environments. Evaluate the thermal resistance values against the system's cooling strategy to maintain junction temperatures within the specified operational range. Confirm that the gate drive circuitry supports the required switching speeds without exceeding the maximum dv/dt limits defined in the datasheet.
This part belongs to the FZ series of highly insulated modules from Infineon Technologies. These modules are engineered for demanding power conversion tasks where electrical isolation and mechanical durability are critical. The series utilizes advanced trench gate technologies to optimize switching losses and conduction characteristics for medium to high-power industrial systems.
Direct replacements must match the 4500 V rating, 800 A current capacity, and identical mounting dimensions. Verify that any substitute module maintains comparable thermal resistance and insulation coordination standards to ensure system safety and performance integrity without redesigning the heatsink interface.