FZ900R12KP4HOSA1

Overview

The FZ900R12KP4HOSA1 is a single IGBT module with an integrated diode, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode technology. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 900 A at TC = 95°C. The repetitive peak collector current reaches 1800 A for 1 ms pulses. Typical saturation voltages are 1.70 V at Tvj = 25°C and 2.10 V at Tvj = 150°C. The module provides 4 kV AC insulation for 1 minute and operates within a junction temperature range of -40°C to 150°C.

Feature Summary

• Integrated Emitter Controlled 4 Diode for optimized switching performance
• Extended operating temperature capability up to 150°C
• High robustness against short-circuit conditions
• Positive temperature coefficient for VCEsat

Applications

• High power converters
• Motor drives
• UPS systems
• Wind turbines

Procurement Notes

Verify the specific ordering suffix HOSA1 against official Infineon documentation to confirm compliance details and material content. Ensure that the procurement channel provides valid traceability data matching the module serial number and datecode printed on the component label.

Selection Notes

Select this module for high-power industrial applications requiring robust short-circuit withstand capabilities. Evaluate thermal resistance values and mounting torque specifications to ensure proper heat dissipation and mechanical stability in the final assembly design.

Part Context

This component belongs to the 62mm C-Series module family from Infineon Technologies. It integrates advanced IGBT4 and EC4 diode technologies into a standard housing designed for high power density and reliable operation in demanding electrical environments.

Replacement Considerations

FZ900R12KP4