FZT1048ATC

Single Bipolar Transistors Overview

The FZT1048A is a 17.5V NPN medium power high gain transistor housed in an SOT223 package. It supports a continuous collector current of 5A and a peak pulse current of 20A. The device features a collector-emitter breakdown voltage (BVCEO) of 17.5V, with higher ratings for BVCES and BVCEV at 50V. Key electrical characteristics include a low saturation voltage of less than 45mV at 500mA and a DC current gain specified up to 20A. Thermal resistance from junction to ambient is 41.7°C/W under standard mounting conditions.

Single Bipolar Transistors Feature Summary

• High continuous collector current capability for robust switching applications
• Low equivalent on-resistance and saturation voltage for efficient power handling
• High DC current gain maintained across a wide range of operating currents
• Robust electrostatic discharge protection rated for human body model testing

Single Bipolar Transistors Applications

• Solenoid drivers
• Relay drivers
• Actuator drivers
• DC module control circuits
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'ATA' corresponds to the required reel size and tape width configuration before procurement. Confirm that the component meets RoHS compliance standards and halogen-free requirements as defined by the manufacturer's quality definitions. Ensure the selected packaging quantity aligns with production volume needs and storage capabilities.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high gain and substantial current handling within a compact surface-mount footprint. Evaluate thermal management strategies based on the specific PCB copper area and layer configuration, as power dissipation varies significantly with mounting conditions. Consider the peak pulse current rating for transient load scenarios to ensure reliable operation under dynamic stress.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Diodes Incorporated's medium power discrete semiconductor lineup. It is engineered for general-purpose switching tasks where high current density and low conduction losses are critical. The SOT223 package provides a balance between thermal performance and board space efficiency, making it suitable for dense electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts, maximum ratings, and thermal characteristics carefully when evaluating alternative components to ensure functional compatibility without compromising circuit safety or performance.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (BVCEO) is specified at 17.5V.

How does the package affect thermal performance?

Thermal resistance from junction to ambient ranges from 41.7°C/W to 104°C/W depending on the PCB copper area and thickness used for mounting.

Is the device compliant with environmental directives?

Yes, the device is lead-free, RoHS compliant, and free of halogens and antimony.