FZT458TA

Single Bipolar Transistors Overview

The FZT458TA is a high-voltage NPN silicon planar transistor manufactured by Diodes Incorporated in the SOT-223 surface-mount package. It provides a collector-emitter breakdown voltage (BVCEO) of 400V and supports a continuous collector current (IC) of 300mA. The device features low saturation voltage, typically less than 200mV at 20mA base drive, and maintains excellent DC current gain characteristics up to 100mA. With a power dissipation rating of 2W on standard PCBs and an operating temperature range from -55°C to +150°C, it is designed for robust medium-power switching applications.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 400V collector-emitter breakdown voltage
• Low saturation voltage for efficient switching performance
• Excellent DC current gain stability across varying collector currents
• Lead-free and halogen-free green packaging compliant with environmental directives

Single Bipolar Transistors Applications

• High voltage switching circuits
• Automotive electronics systems
• Power supply designs requiring medium power handling
• General purpose amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TA to confirm reel packing quantities and carrier specifications. Ensure compliance with RoHS 3 and REACH regulations as stated in the datasheet notes. Confirm that the application environment respects the absolute maximum ratings for thermal resistance and junction temperature limits during operation.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is required in a compact surface-mount form factor. Consider the complementary PNP type FZT558 if push-pull configurations are needed. Evaluate the thermal resistance values based on the specific copper area available on the printed circuit board to ensure adequate heat dissipation under continuous load conditions.

Single Bipolar Transistors Part Context

This part belongs to the FZT series of medium power transistors from Diodes Incorporated. It utilizes a molded plastic SOT-223 package with matte tin plated leads. The device is manufactured using silicon epitaxial planar technology, ensuring reliable performance in demanding electronic environments while maintaining compatibility with standard automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the FZT558 as the complementary PNP type. No other direct substitute part numbers are listed in the official documentation. Verify pinout compatibility and electrical parameters before considering any alternative components from different manufacturers.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the FZT458?

The maximum collector-emitter breakdown voltage (BVCEO) is 400V.

Is the FZT458 suitable for automotive applications?

For automotive applications requiring AEC-Q100 qualification or PPAP capability, customers must contact Diodes Incorporated directly as standard parts may not meet these specific change control requirements.

What is the typical saturation voltage at low currents?

The saturation voltage VCE(sat) is typically less than 200mV when the collector current is 20mA and the base current is 2mA.