FZT458TC

Single Bipolar Transistors Overview

The FZT458TC is a high-voltage NPN medium power transistor manufactured by Diodes Incorporated, housed in an SOT-223 package. It features a collector-emitter breakdown voltage (BVCEO) of 400V and supports a continuous collector current (IC) of 300mA. The device offers excellent DC current gain (hFE) characteristics up to 100mA, with a minimum gain of 100 at 1mA and 50mA test conditions. It exhibits low saturation voltage (VCE(sat)) of less than 200mV at 20mA base drive. The transition frequency (fT) is rated at 50MHz, and the maximum power dissipation reaches 2W under standard mounting conditions.

Single Bipolar Transistors Feature Summary

• High voltage capability with BVCEO exceeding 400V for robust operation
• Low saturation voltage below 200mV at 20mA base current for efficient switching
• Excellent DC current gain characteristics maintained up to 100mA collector current

Single Bipolar Transistors Applications

• High voltage switching circuits
• Automotive applications requiring specific change control
• General purpose medium power amplification

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation before procurement. Confirm that the specific variant matches the required packaging quantity and reel specifications. Ensure compliance with RoHS 3 and halogen-free requirements if mandated by your project standards. Cross-reference the date code marking on the component body to verify manufacturing timeline and authenticity.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required in a surface-mount format. Consider the thermal resistance values and PCB copper area requirements for adequate heat dissipation. Evaluate the complementary PNP type availability if push-pull configurations are needed. Verify that the operating temperature range meets the environmental constraints of the target application.

Single Bipolar Transistors Part Context

This part belongs to the FZT series of high-voltage transistors from Diodes Incorporated. It is designed for applications demanding reliable performance in compact surface-mount packages. The series includes complementary types and variants optimized for different power and current requirements within the same high-voltage family.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's datasheet for direct pin-compatible alternatives or functional equivalents. Verify that any substitute maintains the 400V breakdown voltage and 300mA current rating. Check thermal characteristics and package dimensions to ensure mechanical fit.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 400V.

What is the typical saturation voltage at low currents?

The saturation voltage (VCE(sat)) is less than 200mV when the collector current is 20mA and base current is 2mA.

Is this component suitable for automotive use?

For automotive applications requiring specific change control, AEC-Q qualification, or IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific criteria.