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FZT657TA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 300V 0.5A SOT-223-3. Review the specifications below when checking this part for your BOM.
The FZT657TA is a high-voltage NPN bipolar junction transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) and collector-base breakdown voltage (BVCBO) exceeding 300V, with a continuous collector current rating of 0.5A and a peak pulse current capability of 1A. The device operates within a temperature range of -55°C to +150°C and utilizes an SOT223 surface-mount package.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and carrier specifications. Ensure that all environmental compliance requirements, including RoHS and halogen-free status, align with project constraints before finalizing procurement orders.
Select this component when circuit designs require high-voltage blocking capabilities combined with moderate continuous current handling. Evaluate the thermal resistance characteristics relative to the intended PCB copper area to ensure safe operating area limits are not exceeded during steady-state or transient operations.
This part belongs to the FZT657 series of high-voltage NPN transistors designed for robust performance in demanding environments. It serves as a complementary counterpart to the PNP type FZT757, facilitating push-pull configurations in power management and signal processing applications requiring high voltage isolation.
FZT757
The maximum continuous collector current (IC) is rated at 0.5A.
Yes, it is qualified to JEDEC standards for high reliability and is suitable for automotive applications, though specific AEC-Q qualified versions may be required for strict change control.
The Electrostatic Discharge Human Body Model (HBM) rating is 4,000V, corresponding to JEDEC Class 3A.
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