Single Bipolar Transistors FZT855TC product image

FZT855TC

$0.32
  • Description:TRANS NPN 150V 5A SOT-223-3
  • Series:-

SKU:b66419963a59 Category: Brand:

  
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FZT855TC is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 150V 5A SOT-223-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FZT855TC

  • Description:TRANS NPN 150V 5A SOT-223-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:355mV @ 500mA, 5A
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1A, 5V
  • Power - Max:3 W
  • Frequency - Transition:90MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for FZT855TC

FZT855TC

Single Bipolar Transistors Overview

The FZT855TC is a 150V NPN medium power transistor manufactured by Diodes Incorporated in an SOT223 package. It features a continuous collector current of 5A and a peak pulse current of 10A. The device offers very low saturation voltage, specified as less than 110mV at 1A, with an equivalent on-resistance of 50mΩ. DC current gain (hFE) is specified up to 10A for high gain hold-up capability. The component operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High continuous collector current capability of 5A
  • Very low saturation voltage for efficient switching
  • Low equivalent on-resistance of 50mΩ
  • DC current gain specified up to 10A

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Power supply circuits
  • Automotive electronics requiring specific change control

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official Diodes Incorporated documentation before procurement. Confirm that the 'TC' suffix aligns with the required reel size, tape width, and quantity per reel specifications found in the datasheet's ordering information section. Ensure compliance with RoHS and halogen-free requirements if applicable to your manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN transistor with low saturation voltage is required in a surface-mount SOT223 package. Consider its complementary PNP type, the FZT955, if a matched pair is needed for push-pull configurations. Evaluate thermal resistance values based on the specific PCB copper coverage and mounting conditions used in your design.

Single Bipolar Transistors Part Context

This part belongs to the FZT855 series of 150V NPN silicon planar transistors designed for medium power applications. It is housed in a Type DN SOT223 package made from molded plastic with matte tin plated leads. The device is lead-free, RoHS compliant, and halogen and antimony free, meeting green device standards.

Single Bipolar Transistors Replacement Considerations

The complementary PNP type is the FZT955. Verify pinout compatibility and electrical characteristics against alternative suppliers' parts if cross-referencing is necessary.

Single Bipolar Transistors FAQ

What is the maximum peak pulse current rating?

The maximum peak pulse current (ICM) is rated at 10A.

Is the FZT855 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.

What is the typical DC current gain at 1A collector current?

The minimum DC current gain (hFE) is 100 when tested at IC = 1A and VCE = 5V.

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