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FZT855TC is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 150V 5A SOT-223-3. Review the specifications below when checking this part for your BOM.
The FZT855TC is a 150V NPN medium power transistor manufactured by Diodes Incorporated in an SOT223 package. It features a continuous collector current of 5A and a peak pulse current of 10A. The device offers very low saturation voltage, specified as less than 110mV at 1A, with an equivalent on-resistance of 50mΩ. DC current gain (hFE) is specified up to 10A for high gain hold-up capability. The component operates within a temperature range of -55°C to +150°C.
Verify the exact ordering suffix against official Diodes Incorporated documentation before procurement. Confirm that the 'TC' suffix aligns with the required reel size, tape width, and quantity per reel specifications found in the datasheet's ordering information section. Ensure compliance with RoHS and halogen-free requirements if applicable to your manufacturing process.
Select this component when a high-current NPN transistor with low saturation voltage is required in a surface-mount SOT223 package. Consider its complementary PNP type, the FZT955, if a matched pair is needed for push-pull configurations. Evaluate thermal resistance values based on the specific PCB copper coverage and mounting conditions used in your design.
This part belongs to the FZT855 series of 150V NPN silicon planar transistors designed for medium power applications. It is housed in a Type DN SOT223 package made from molded plastic with matte tin plated leads. The device is lead-free, RoHS compliant, and halogen and antimony free, meeting green device standards.
The complementary PNP type is the FZT955. Verify pinout compatibility and electrical characteristics against alternative suppliers' parts if cross-referencing is necessary.
The maximum peak pulse current (ICM) is rated at 10A.
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and IATF 16949 certified manufacturing, customers must contact Diodes Incorporated directly.
The minimum DC current gain (hFE) is 100 when tested at IC = 1A and VCE = 5V.
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