FET, MOSFET Arrays G05NP10S product image

G05NP10S

$0.17
  • Description:MOSFET 100V 5A/6A 8SOP
  • Series:-

SKU:95ab58ef991e Category: Brand:

  
  • Quantity
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G05NP10S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 100V 5A/6A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G05NP10S

  • Description:MOSFET 100V 5A/6A 8SOP
  • Series:-
  • Mfr:Goford Semiconductor
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:5A (Tc), 6A (Tc)
  • Rds On (Max) @ Id, Vgs:170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V, 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:797pF @ 25V, 760pF @ 25V
  • Power - Max:3W (Tc), 2.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for G05NP10S

G05NP10S

FET, MOSFET Arrays Overview

The G05NP10S is an N-channel Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced Super Junction (SJ) technology to achieve low conduction resistance and extremely low gate charge. The device is available in multiple package options including TO-220, SO-8 (DFN5*6-8L), TO-220F, DPAK (TO-252), and D2PAK (TO-263). These characteristics make it suitable for applications requiring high efficiency and excellent EMI performance.

FET, MOSFET Arrays Feature Summary

  • Advanced Super Junction technology provides superior conduction resistance compared to traditional trench structures.
  • Extremely low gate charge reduces switching losses and simplifies drive circuit requirements.
  • Excellent Electromagnetic Interference (EMI) performance supports compliance with strict emission standards.

FET, MOSFET Arrays Applications

  • Household appliance drivers
  • Computer power supplies
  • Uninterruptible Power Supplies (UPS)
  • Electric Vehicle (EV) charging systems

FET, MOSFET Arrays Procurement Notes

Verify the specific package variant required, as the G05NP10S is offered in multiple form factors including TO-220, SO-8, DPAK, and D2PAK. Confirm that the selected package matches the thermal and mechanical constraints of the target design. Ensure compatibility with the intended application environment, such as EV charging or consumer electronics, before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits that demand high power density and efficiency. The Super Junction architecture is ideal for replacing standard MOSFETs where lower on-resistance and reduced gate drive power are critical. Consider the available package options to optimize board space and thermal management strategies for the specific system layout.

FET, MOSFET Arrays Part Context

Goford Semiconductor produces a range of Power MOSFETs for automotive, industrial, and consumer markets. The G05NP10S belongs to their Super Junction series, which focuses on enhancing efficiency through reduced conduction and switching losses. This product line targets modern power conversion applications requiring compact designs and high reliability.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers for the G05NP10S were not found in the provided documentation. Cross-referencing should be performed based on electrical parameters such as voltage rating, current capacity, and package type using official manufacturer substitution tools.

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