G06NP06S2

$1.06

Description：MOSFET N/P-CH 60V 6A 8SOP
Series：TrenchFET®

SKU:f8c8274f841c Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G06NP06S2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N/P-CH 60V 6A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G06NP06S2

Description：MOSFET N/P-CH 60V 6A 8SOP
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Rds On (Max) @ Id, Vgs：35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1350pF @ 30V, 2610pF @ 30V
Power - Max：2W (Tc), 2.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G06NP06S2

G06NP06S2

FET, MOSFET Arrays Overview

The G06NP06S2 is a dual N-channel and P-channel enhancement mode power MOSFET utilizing advanced trench technology. It provides excellent RDS(ON) and low gate charge in an SOP-8 package. The NMOS offers VDS of 60V, ID of 6A at VGS=10V, and RDS(ON) <35mΩ. The PMOS features VDS of -60V, ID of -6A at VGS=-10V, and RDS(ON) <45mΩ. Total gate charge is 22nC for the NMOS and 25nC for the PMOS.

FET, MOSFET Arrays Feature Summary

Advanced trench technology delivers low on-resistance and reduced gate charge for high efficiency.
Complementary N-channel and P-channel configuration enables level-shifted high-side switching applications.
RoHS compliant construction ensures environmental safety standards are met.

FET, MOSFET Arrays Applications

Power switches
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required electrical specifications for your circuit design before procurement. Ensure compatibility with standard SOP-8 mounting processes.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring complementary high-side and low-side switching in a compact form factor. Evaluate thermal resistance values to ensure adequate heat dissipation within the specified operating temperature range. Consider gate charge requirements for driving circuits to optimize switching performance.

FET, MOSFET Arrays Part Context

This device belongs to Goford Semiconductor's lineup of trench technology MOSFETs designed for general-purpose power switching. It integrates both N-channel and P-channel devices into a single package to simplify board layout and reduce component count in bridge or half-bridge configurations.