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G080N06K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 60V 80A 110W TO-252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for G080N06K
- Description：MOSFET N-CH 60V 80A 110W TO-252
- Series：-
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：77 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3408 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for G080N06K
Single FETs, MOSFETs Overview
The G080N06K is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve excellent on-resistance and low gate charge characteristics. The device features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 80A at 25°C case temperature. The maximum drain-source on-resistance (RDS(on)) is specified as less than 8mΩ at VGS = 10V and ID = 20A. It is housed in a TO-252 package with a power dissipation rating of 110W.
Single FETs, MOSFETs Feature Summary
- Advanced trench technology for optimized electrical performance
- High current handling capability with rugged avalanche testing
- Low thermal resistance for efficient heat dissipation
Single FETs, MOSFETs Applications
- Power switching circuits
- DC/DC converters
Single FETs, MOSFETs Procurement Notes
Verify the component against the official datasheet specifications, specifically confirming the 60V rating and TO-252 packaging. Ensure that the sourcing channel provides documentation verifying RoHS compliance and the specific marking code 'G080N06' to authenticate the manufacturer and part identity before integration into designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high efficiency and robust switching performance within a 60V system. The low RDS(on) minimizes conduction losses, while the 100% avalanche-tested design ensures reliability in inductive load scenarios. Consider the thermal management requirements based on the junction-to-case thermal resistance when designing the PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to the Goford Semiconductor lineup of N-Channel Enhancement Mode Power MOSFETs. These devices are engineered for general-purpose power management applications where low on-resistance and fast switching speeds are critical. The TO-252 package facilitates surface-mount assembly, balancing performance with manufacturing convenience.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 60V VDS, 80A ID, and TO-252 package constraints. Verify that alternative components meet or exceed the 8mΩ RDS(on) specification and possess comparable avalanche energy ratings to ensure circuit compatibility.
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