G1008B

$0.84

Description：MOSFET 100V 8A 8SOP
Series：TrenchFET®

SKU:48dd045e8a18 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G1008B is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 100V 8A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G1008B

Description：MOSFET 100V 8A 8SOP
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Rds On (Max) @ Id, Vgs：130mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：690pF @ 25V
Power - Max：3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G1008B

G1008B

FET, MOSFET Arrays Overview

The G1008B is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a 100V drain-source voltage rating and an 8A continuous drain current capability at 25°C. Key electrical parameters include a maximum RDS(on) of 120mΩ at VGS=10V and 130mΩ at VGS=4.5V. Total gate charge is typically 25nC. The component is housed in a lead-free SOP-8 package and is rated for operation within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
Dual N-channel configuration with identical low-side and high-side switch capabilities.
100% avalanche tested for enhanced ruggedness and reliability.

FET, MOSFET Arrays Applications

Power switching circuits
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details, such as reel quantities or tape-and-reel specifications. Ensure that the requested part number matches the exact SOP-8 marking code 'G1008B' to avoid confusion with similar variants. Confirm RoHS compliance status directly with the supplier if required for your manufacturing process.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a dual N-channel MOSFET with a 100V breakdown voltage. Consider the thermal resistance of 41.7°C/W when designing heat dissipation strategies. The low gate charge of 25nC makes it suitable for efficient switching operations. Verify that the required drive voltage aligns with the specified RDS(on) thresholds at 4.5V or 10V.

FET, MOSFET Arrays Part Context

This component belongs to the family of dual N-channel enhancement mode power MOSFETs produced by Goford Semiconductor. It is designed using trench technology to optimize performance metrics like on-resistance and switching speed. The SOP-8 package provides a compact solution for surface-mount assembly in various electronic devices.