G120P03S2

$1.03

Description：MOSFET 30V 16A 8SOP
Series：TrenchFET®

SKU:ecab31c779e3 Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G120P03S2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 30V 16A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G120P03S2

Description：MOSFET 30V 16A 8SOP
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：16A (Tc)
Rds On (Max) @ Id, Vgs：14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2835pF @ 15V
Power - Max：1.4W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G120P03S2

G120P03S2

FET, MOSFET Arrays Overview

The G120P03S2 is a dual P-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a -30V drain-source voltage and a continuous drain current of -16A at VGS = -10V. The on-resistance is less than 14mΩ at -10V gate drive and less than 18mΩ at -4.5V. Packaged in SOP-8 Dual, the device supports a power dissipation of 3W and operates within a junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

Dual configuration with identical low-side and high-side switches for simplified circuit design
Advanced trench technology providing excellent on-resistance and low gate charge
100% avalanche tested for enhanced reliability under inductive switching conditions

FET, MOSFET Arrays Applications

Power switch applications
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific package marking 'G120P03' against official datasheets to confirm authenticity. Ensure the ordering suffix matches the required packaging quantity of 4000 pieces per reel. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation prior to procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring two matched P-channel switches in a single package. Verify that the -30V breakdown voltage meets system requirements. Check that the thermal resistance of 41.2°C/W allows for adequate heat dissipation within the specified operating temperature range without exceeding maximum junction limits.

FET, MOSFET Arrays Part Context

This component belongs to the Goford Semiconductor trench MOSFET family. It is designed as a dual-device solution to replace separate discrete components. The SOP-8 Dual package provides a compact footprint suitable for space-constrained industrial and consumer electronics applications requiring efficient power management.