G20N03K

$0.69

Description：N30V,RD(MAX)<20M@10V,RD(MAX)<24M
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:46369359564d Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G20N03K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N30V,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G20N03K

Description：N30V,RD(MAX)<20M@10V,RD(MAX)<24M
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：923 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for G20N03K

G20N03K

Single FETs, MOSFETs Overview

The G20N03K is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 30V, a continuous drain current of 30A at VGS=10V, and a maximum RDS(on) of 20mΩ at VGS=10V or 24mΩ at VGS=4.5V. It is housed in a TO-252 package with a power dissipation rating of 33W and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized performance
Low gate charge characteristics
High avalanche energy capability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switching circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking details. Confirm that the component meets all required environmental standards and RoHS compliance specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds. Ensure the thermal management design accommodates the specified power dissipation and thermal resistance values under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor power MOSFET family designed for general-purpose switching applications. It is engineered to provide reliable performance in compact surface-mount configurations suitable for modern electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists from Goford Semiconductor for verified equivalent parts. Do not substitute without confirming pinout compatibility and electrical parameter alignment.