G28N03D3

$0.60

Description：N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ca400264cb9b Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G28N03D3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N30V,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G28N03D3

Description：N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：896 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：23W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (3.15x3.05)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for G28N03D3

G28N03D3

Single FETs, MOSFETs Overview

The G28N03D3 is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a 30V drain-source voltage rating and supports a continuous drain current of 28A at 25°C case temperature. Key electrical parameters include a maximum RDS(on) of 12mΩ at VGS=10V and 18mΩ at VGS=4.5V. It is housed in an 8-lead DFN3x3 surface-mount package with a maximum junction-to-case thermal resistance of 5.4°C/W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for optimized switching performance
Low gate charge characteristics for efficient drive requirements
Highly reliable avalanche testing compliance

Single FETs, MOSFETs Applications

Power switch circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement, as packaging quantities or tape-and-reel specifications may vary. Confirm that the component meets RoHS compliance standards required for your assembly process. Ensure thermal management solutions align with the specified junction-to-case thermal resistance limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 30V N-channel MOSFET with high current handling capabilities up to 28A. Consider the 8-DFN package dimensions for PCB layout constraints. Evaluate the gate charge and threshold voltage specifications to ensure compatibility with your driver circuitry logic levels and switching frequency requirements.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor power MOSFET portfolio, specifically utilizing TrenchFET technology. It is designed for general-purpose power switching applications where low conduction losses and fast switching speeds are critical. The device is intended for surface-mount assembly in compact electronic designs.