G33N03D52

$0.90

Description：N30V, 33A,RD<13M@10V,VTH1V~3V, D
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5e03a3a6c711 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G33N03D52 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N30V, 33A,RD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G33N03D52

Description：N30V, 33A,RD<13M@10V,VTH1V~3V, D
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：782 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：29W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (4.9x5.75)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for G33N03D52

G33N03D52

Single FETs, MOSFETs Overview

The G33N03D52 is a dual N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a 30V drain-source voltage rating and supports a continuous drain current of 33A at 25°C case temperature. Key electrical parameters include an on-resistance of less than 9.5mΩ at VGS=10V and 12.5mΩ at VGS=4.5V. It is housed in a DFN5x6-8L package with a maximum junction-to-case thermal resistance of 4.2°C/W.

Single FETs, MOSFETs Feature Summary

Dual configuration providing two identical low-side and high-side switches within a single package.
Advanced trench technology designed for excellent on-resistance performance and low gate charge.
Capable of handling repetitive avalanche energy, verified through 100% avalanche testing.

Single FETs, MOSFETs Applications

Power switching circuits
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking 'G33N03' against the datasheet schematic to confirm pin assignment compatibility. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Confirm RoHS compliance status if required by assembly specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact dual MOSFET solution is required for synchronous rectification or half-bridge topologies. The low on-resistance at both 10V and 4.5V gate drive voltages makes it suitable for various logic-level control applications. Consider the 33A continuous current capability relative to the thermal constraints of the DFN5x6-8L package.

Single FETs, MOSFETs Part Context

This part belongs to the G33N03 series of dual N-channel MOSFETs from Goford Semiconductor. It shares similar electrical characteristics with other variants in the lineup but is distinguished by its specific DFN5x6-8L packaging. The series is engineered for general-purpose power switching applications requiring high efficiency and compact form factors.