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G3F05MT12GB2-T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 5M HALF-BRIDGE SICPAK G SI. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G3F05MT12GB2-T
- Description：1200V 5M HALF-BRIDGE SICPAK G SI
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G3F05MT12GB2-T
FET, MOSFET Arrays Overview
The G3F05MT12GB2-T is a silicon carbide half-bridge MOSFET module from the SiCPAK F series, manufactured by GeneSiC Semiconductor. It features an N-channel configuration with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 216 A. The device exhibits a low on-resistance of 4.6 mOhms and a gate threshold voltage of 2.2 V. Operating within a temperature range of -40 C to +175 C, it utilizes press-fit installation in a SiCPAK package measuring 65 mm by 56.7 mm by 12 mm. Switching characteristics include a rise time of 15 ns and a fall time of 30 ns.
FET, MOSFET Arrays Feature Summary
- Utilizes silicon carbide technology for high-efficiency power switching
- Designed as a dual N-channel half-bridge configuration
- Supports press-fit mounting for secure mechanical integration
FET, MOSFET Arrays Applications
- High-frequency power conversion systems
- Industrial motor drive inverters
- Uninterruptible power supply units
FET, MOSFET Arrays Procurement Notes
Verify the specific manufacturer designation, as some listings associate this part with Navitas Semiconductor due to corporate acquisitions. Confirm the exact suffix and packaging details against the official datasheet to ensure compatibility with your thermal management design. Check regional availability restrictions before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component when a robust half-bridge topology is required with low conduction losses. The 1.2 kV rating suits medium-voltage applications. Ensure the PCB layout supports press-fit termination methods. Compare the 4.6 mOhm resistance against system thermal requirements to validate heat dissipation capabilities.
FET, MOSFET Arrays Part Context
This module belongs to the SiCPAK F family, which integrates silicon carbide MOSFETs into compact power modules. The series emphasizes reduced parasitic inductance and improved thermal performance compared to traditional discrete assemblies. It serves as a direct replacement for legacy silicon-based half-bridge solutions in demanding power electronics environments.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for equivalent half-bridge modules with matching voltage and current ratings. Verify pinout compatibility and thermal interface material specifications before swapping components.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
