G3F09MT12G3T-T

$209.79

Description：1200V 9M 3L-T-NPC SICPAK G SIC M
Series：-

SKU:571626d49094 Category: FET, MOSFET Arrays Brand: GeneSiC Semiconductor

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Product introduction

G3F09MT12G3T-T is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 9M 3L-T-NPC SICPAK G SIC M. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G3F09MT12G3T-T

Description：1200V 9M 3L-T-NPC SICPAK G SIC M
Series：-
Mfr：GeneSiC Semiconductor
Package：Tray
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G3F09MT12G3T-T

G3F09MT12G3T-T

FET, MOSFET Arrays Overview

The G3F09MT12G3T-T is a silicon carbide MOSFET module manufactured by GeneSiC Semiconductor, part of the SiCPAK F series. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 9.3 milliohms. The device utilizes a press-fit installation style within a SiCPAK G package. It supports a continuous drain current of 104 amperes and operates within a temperature range from -40 to +175 degrees Celsius. The module incorporates thermal interface material and is designed for high-power applications requiring efficient heat dissipation.

FET, MOSFET Arrays Feature Summary

Utilizes silicon carbide technology for enhanced thermal performance and efficiency
Integrated thermal interface material simplifies mounting procedures
Press-fit termination method ensures reliable electrical connections
High-temperature operation capability up to 175 degrees Celsius

FET, MOSFET Arrays Applications

Three-level neutral-point-clamped inverters
High-efficiency motor drives
Industrial power conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer designation as sources may list Navitas Semiconductor due to corporate acquisition history. Confirm the exact datasheet version matches the required electrical characteristics. Ensure compatibility with press-fit tooling specifications before procurement. Check for any product change notifications that might affect pinout or thermal parameters.

FET, MOSFET Arrays Selection Notes

Select this component when designing three-phase inverter topologies requiring low conduction losses. The SiCPAK G package offers a compact form factor suitable for space-constrained designs. Consider the 9.3 milliohm resistance for optimizing system efficiency at high current levels. Verify gate drive requirements align with the module's switching characteristics.

FET, MOSFET Arrays Part Context

This module belongs to the G3F series of silicon carbide power modules. It represents an evolution in packaging technology with the SiCPAK G design. The series targets high-performance industrial and automotive applications. GeneSiC Semiconductor specializes in wide-bandgap semiconductor solutions for power electronics.