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G3F18MT12FB4 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 18M FULL-BRIDGE SICPAK F S. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G3F18MT12FB4
- Description：1200V 18M FULL-BRIDGE SICPAK F S
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G3F18MT12FB4
FET, MOSFET Arrays Overview
The G3F18MT12FB4 is a silicon carbide (SiC) MOSFET module manufactured by GeneSiC Semiconductor, part of the SiCPAK F series. It features an N-channel configuration with a drain-source breakdown voltage (Vds) of 1.2 kV and a maximum on-resistance (Rds(on)) of 24 mOhms. The device supports a continuous drain current (Id) of 53 A and operates within a junction temperature range of -40°C to +175°C. Packaged in a press-fit SiCPAK format, it has physical dimensions of 65 mm in length, 34 mm in width, and 12 mm in height. The module includes thermal interface material and exhibits rise and fall times of 16 ns and 26 ns, respectively.
FET, MOSFET Arrays Feature Summary
- Integrated full-bridge topology for compact power conversion designs
- Press-fit installation method ensuring robust mechanical connection
- High thermal conductivity packaging for efficient heat dissipation
- Silicon carbide technology enabling high-temperature operation
FET, MOSFET Arrays Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer designation, as some sources list Navitas Semiconductor while others cite GeneSiC Semiconductor. Confirm the specific Rds(on) value, as documentation varies between 18 mOhms and 24 mOhms. Ensure the package type matches the required press-fit mounting style. Check RoHS compliance details before finalizing procurement specifications.
FET, MOSFET Arrays Selection Notes
Select this module for applications requiring a pre-configured full-bridge SiC solution. The SiCPAK F package simplifies assembly through press-fit termination. Consider the 1.2 kV rating for medium-voltage systems. Evaluate the 53 A current capability against load requirements. Verify compatibility with existing thermal management infrastructure due to the specific package dimensions.
FET, MOSFET Arrays Part Context
This component belongs to the G3F series of silicon carbide power modules. It utilizes Trench-Assisted Planar (TAP) technology from GeneSiC Semiconductor. The SiCPAK F family is designed for high-power density applications. It offers an alternative to discrete SiC MOSFET assemblies by integrating multiple devices into a single reliable package.
FET, MOSFET Arrays Replacement Considerations
G3F18MT12K is a discrete TO-247-4 variant with similar electrical ratings but requires separate bridge construction. G3F17MT12FB2 is a half-bridge module with comparable voltage and current specs but different internal configuration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
