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G3F34MT12K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 34M TO-247-4 G3F SIC MOSFE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for G3F34MT12K
- Description：1200V 34M TO-247-4 G3F SIC MOSFE
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：45mOhm @ 26A, 18V
- Vgs(th) (Max) @ Id：4.3V @ 18mA
- Gate Charge (Qg) (Max) @ Vgs：104 nC @ 18 V
- Vgs (Max)：+22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：2418 pF @ 800 V
- FET Feature：-
- Power Dissipation (Max)：263W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for G3F34MT12K
Single FETs, MOSFETs Overview
The G3F34MT12K is a single-channel N-channel Silicon Carbide (SiC) MOSFET manufactured by GeneSiC Semiconductor. It features a drain-source breakdown voltage of 1.2 kV and a maximum on-resistance of 34 mOhms. The device utilizes the Gen-3 Fast (G3F) technology platform and is housed in a TO-247-4 through-hole package.
Single FETs, MOSFETs Feature Summary
- Utilizes Gen-3 Fast trench-assisted planar technology for optimized switching performance
- Designed for high-efficiency power conversion applications requiring low thermal resistance
Single FETs, MOSFETs Applications
- AI data center power supplies
- Electric vehicle charging systems
- Energy storage systems
- Solar solutions
Single FETs, MOSFETs Procurement Notes
Verify the specific manufacturer designation, as documentation may list Navitas Semiconductor or GeneSiC Semiconductor. Confirm the package type is TO-247-4 and the on-resistance matches the 34 mOhm specification. Ensure the component is identified as a new product from the manufacturer before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 1200V rating with a 34 mOhm on-resistance in a TO-247-4 package. Consider the Gen-3 Fast technology benefits for high-frequency operation. Compare against other G3F series variants if different current or resistance ratings are required.
Single FETs, MOSFETs Part Context
This part belongs to the G3F series of Silicon Carbide MOSFETs. The series is characterized by the use of latest trench-assisted planar technology. Other parts in this family include variants with different on-resistances such as the G3F18MT12K and G3F20MT12K, offering flexibility in packaging formats.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
