G3R350MT12J

$3.32

Description：SIC MOSFET N-CH 11A TO263-7
Series：G3R™
Mfr：GeneSiC Semiconductor
Package：Tube

SKU:2434e1015fc1 Category: Single FETs, MOSFETs Brand: GeneSiC Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

G3R350MT12J is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is SIC MOSFET N-CH 11A TO263-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G3R350MT12J

Description：SIC MOSFET N-CH 11A TO263-7
Series：G3R™
Mfr：GeneSiC Semiconductor
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id：2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 15 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：334 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for G3R350MT12J

G3R350MT12J

Single FETs, MOSFETs Overview

The G3R350MT12J is a Silicon Carbide (SiC) MOSFET from the G3R™ series, manufactured by GeneSiC Semiconductor. It features an N-Channel Enhancement Mode configuration housed in a TO-263-7 package with Kelvin Source pins. The device supports a Drain-Source Voltage of 1200 V and offers a typical On-State Resistance of 350 mΩ at 25°C. Continuous Forward Current ratings are 10 A at 25°C and 7 A at 100°C. Key electrical parameters include a Gate Threshold Voltage of 2.7 V, Total Gate Charge of 10 nC, Input Capacitance of 331 pF, and Output Capacitance of 10 pF. Switching characteristics include a Turn-On Delay Time of 9 ns, Rise Time of 10 ns, and Fall Time of 7 ns.

Single FETs, MOSFETs Feature Summary

Utilizes LoRing™ Electromagnetically Optimized Design for superior cost-performance index.
Features Low Temperature Coefficient of Rds(on) to enable ease of paralleling without thermal runaway.
Includes a robust body diode characterized by low forward voltage and low reverse recovery charge.
Subjected to 100% Avalanche (UIL) testing to ensure superior robustness and system reliability.

Single FETs, MOSFETs Applications

Solar Inverters
High Voltage DC-DC Converters
Switched Mode Power Supplies
Auxiliary Motor Drives

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure ordering specifications match the exact suffix requirements for packaging variations. Validate datasheet revision dates against current manufacturing standards to guarantee parameter accuracy during procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring low switching losses and reduced ringing. The Kelvin Source pin facilitates accurate gate drive control, minimizing parasitic inductance effects. Consider the thermal resistance and power dissipation limits when designing heat sinks for continuous operation at elevated temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the G3R™ SiC MOSFET family, representing third-generation technology. It is designed to replace traditional silicon MOSFETs in high-voltage environments. The TO-263-7 package provides a compact footprint suitable for surface-mount assembly, supporting higher power density designs compared to larger through-hole packages.