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Product Detailed Parameters
- Description：IGBT PT 1200V TO-247AB
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：35 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 35A
- Power - Max：-
- Switching Energy：2.66mJ (on), 4.35mJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：-
- Test Condition：800V, 35A, 22Ohm, 15V
- Reverse Recovery Time (trr)：36 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AB
- Grade：-
- Qualification：-
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Overview
The GA35XCP12-247 is a Silicon Carbide (SiC) diode and IGBT co-packaged module manufactured by GeneSiC Semiconductor. It utilizes Optimal Punch Through (OPT) technology to deliver high-performance switching capabilities in a TO-247AB package. The device features a collector-emitter voltage rating of 1200 V and a continuous DC collector current of 35 A at Tc = 105 °C. The integrated SiC freewheeling diode provides extremely fast switching speeds with a reverse recovery time of 36 ns, while the IGBT exhibits a saturation voltage of 3.0 V at 25 °C. Thermal resistance from junction to case is specified at 0.34 K/W for the IGBT and 0.31 K/W for the SiC diode.
Feature Summary
- Integrates an IGBT and a SiC freewheeling diode in a single industry-standard TO-247AB package.
- Utilizes Optimal Punch Through (OPT) technology for improved circuit efficiency and low switching losses.
- Features temperature-independent switching behavior and positive temperature coefficient for easy paralleling.
- Provides best-in-class RBSOA/SCSOA capability and supports high junction temperature operation.
Applications
- Solar Inverters
- Server Power Supplies
- Resonant Inverters operating above 100 kHz
- Inductive Heating systems
- Electronic Welders
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status prior to design finalization. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values. Validate that application requirements do not exceed the absolute maximum ratings defined in the official documentation.
Selection Notes
Select this component for applications requiring high-frequency switching and robust short-circuit withstand capability. The 1200 V rating suits medium-voltage power conversion topologies. Consider the TO-247AB footprint for standard mounting configurations. Evaluate thermal performance based on the specific ambient conditions and heat sink capabilities available in the target design environment.
Part Context
This part belongs to GeneSiC's portfolio of silicon carbide power modules designed for high-efficiency power electronics. It combines traditional IGBT switching characteristics with the superior properties of SiC rectification. The module addresses the need for reduced switching losses and higher operating temperatures in modern power conversion systems.
Replacement Considerations
Direct replacements must match the 1200 V / 35 A rating and TO-247AB package. Verify pinout compatibility and thermal resistance specifications. Cross-reference switching times and forward voltage drops to ensure equivalent circuit performance in the specific application topology.
