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The GA400TD25S is a dual IGBT module from the GA400TDxxS series, manufactured by Vishay Semiconductors. It features a Dual INT-A-Pak package with SMD/SMT mounting style. The device has a maximum collector-to-emitter voltage (VCEO) of 250 V and a continuous collector current of 400 A at 25°C. The junction-to-case thermal resistance is 0.09 °C/W for the IGBT and 0.20 °C/W for the diode. Operating temperature ranges from -40°C to +150°C. The gate-to-emitter maximum voltage is ±20 V. The module utilizes Silicon technology.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status as indicated in product documentation. Check for specific ordering suffixes that may affect packaging or electrical parameters. Ensure storage conditions remain within specified limits prior to installation.
Evaluate thermal management requirements based on junction-to-case resistance values. Consider gate drive compatibility with specified threshold voltages and total gate charge. Assess system voltage levels against the 250 V collector-to-emitter rating. Verify mechanical fit within the Dual INT-A-Pak footprint constraints.
This component belongs to the GA400TDxxS series of dual IGBT modules. It represents Generation 4 technology designed for industrial power conversion applications. The module integrates standard speed IGBTs with HEXFRED antiparallel diodes in a single package structure.
No public confirmed substitute part numbers are available in the provided documentation.