GA50JT12-247

Overview

The GA50JT12-247 is a normally-off Silicon Carbide Junction Transistor (SJT) manufactured by GeneSiC Semiconductor. It features a TO-247 package with a drain-source voltage of 1200 V and a continuous drain current of 100 A at 25°C case temperature, decreasing to 50 A at 145°C. The device exhibits a maximum on-resistance of 35 mΩ at 175°C and supports short-circuit withstand capability exceeding 20 µs. Thermal resistance from junction to case is 0.26 °C/W, enabling operation up to a maximum junction temperature of 175°C.

Feature Summary

• Gate oxide free SiC switch construction
• Positive temperature coefficient of RDS(on)
• Compatible with standard Si MOSFET/IGBT gate drive ICs
• Suitable for connecting an anti-parallel diode

Applications

• Down hole oil drilling and geothermal instrumentation
• Hybrid electric vehicles (HEV)
• Solar inverters and switched-mode power supplies (SMPS)
• Power factor correction (PFC) and induction heating
• Motor drives and uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific revision date against the manufacturer's official documentation before procurement. Confirm that the ordering suffix matches the required package variant and electrical characteristics. Ensure compliance with the manufacturer's disclaimer regarding life-saving or safety-critical applications where failure may result in injury or property damage.

Selection Notes

Select this component for high-voltage, high-current applications requiring low conduction losses and robust short-circuit tolerance. Evaluate thermal management requirements based on the 0.26 °C/W junction-to-case resistance and derating curves. Consider proportional gate drive topologies for wide drain current ranges to optimize gate drive power consumption and switching performance.

Part Context

This part belongs to the GeneSiC SJT family, utilizing silicon carbide technology for superior thermal and electrical performance compared to traditional silicon devices. The TO-247 form factor facilitates through-hole mounting for high-power modules. The datasheet provides SPICE model parameters for circuit simulation and detailed driving instructions for various gate drive topologies.

Replacement Considerations

No official substitute part numbers are listed in the provided documentation. When evaluating alternatives, verify compatibility with existing gate drive circuits, ensuring the replacement device supports similar short-circuit withstand capabilities and thermal resistance values. Check for matching package dimensions and pinout configurations to ensure mechanical interchangeability.

FAQ

What is the short-circuit withstand capability of the GA50JT12-247?

The device has a non-repetitive short-circuit safe operating area (SCSOA) capability exceeding 20 µs at a junction temperature of 175°C, with a gate current of 1 A and a drain-source voltage of 800 V.

How does the on-resistance vary with temperature?

The GA50JT12-247 exhibits a positive temperature coefficient for RDS(on). The typical value increases from 20 mΩ at 25°C to 30 mΩ at 150°C, and reaches 35 mΩ at 175°C when tested at a drain current of 50 A.

Is the GA50JT12-247 compatible with standard gate drivers?

Yes, the device is designed to be compatible with standard Silicon MOSFET and IGBT gate drive ICs. It can also be driven using TTL logic after current amplification or specialized high-speed drive topologies.