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GB05MPS17-247 is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE SIL CARB 1700V 25A TO2472. Review the specifications below when checking this part for your BOM.
Single Diodes specifications for GB05MPS17-247
- Description：DIODE SIL CARB 1700V 25A TO2472
- Series：SiC Schottky MPS™
- Mfr：GeneSiC Semiconductor
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1700 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 5 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：6 µA @ 1700 V
- Capacitance @ Vr, F：334pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
Single Diodes datasheet and documents for GB05MPS17-247
Single Diodes Overview
The GB05MPS17-247 is a Silicon Carbide Schottky MPS diode rated for 1700 V repetitive peak reverse voltage and 5 A continuous forward current at 165°C. It features a TO-247-2 package with a thermal resistance of 0.97 °C/W. Electrical characteristics include a maximum forward voltage of 2.1 V at 175°C, a total capacitive charge of 54 nC at 1200 V, and a switching time under 10 ns at 600 V. The device operates within a temperature range of -55 to 175°C.
Single Diodes Feature Summary
- Enhanced surge and avalanche robustness
- Temperature independent fast switching
- Positive temperature coefficient of forward voltage
- Low reverse leakage current
Single Diodes Applications
- EV Fast Chargers
- Solar Inverters
- Motor Drives
- Switched Mode Power Supply (SMPS)
- Induction Heating and Welding
Single Diodes Procurement Notes
Verify the specific datasheet revision against the manufacturer's official website prior to procurement. Confirm compliance requirements such as RoHS and REACH status directly with GeneSiC Semiconductor representatives. Ensure that the ordering suffix matches the required packaging format. Validate absolute maximum ratings against the intended operating conditions to prevent device failure.
Single Diodes Selection Notes
Select this component for high-frequency rectification applications requiring low thermal resistance and high system reliability. The positive temperature coefficient facilitates easy paralleling without thermal runaway. Evaluate the forward voltage drop and capacitive charge parameters to optimize efficiency in high-voltage power conversion circuits.
Single Diodes Part Context
This part belongs to the GeneSiC SiC Schottky MPS™ diode family. It utilizes Trench-Assisted Planar (TAP) technology to achieve superior figure of merit and reduced cooling requirements compared to standard silicon devices. The series is designed for high-power density systems.
Single Diodes Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
Single Diodes FAQ
What is the typical switching time at 600 V?
The switching time is less than 10 ns when tested at 600 V.
Does the device exhibit reverse recovery current?
No, the device features zero reverse recovery current due to its Schottky barrier structure.
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