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Product Detailed Parameters
- Description：IGBT MODULE 1200V 100A SOT227
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- IGBT Type：PT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：-
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：8.55 nF @ 25 V
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Overview
The GB100XCP12-227 is an IGBT and SiC diode co-pack module manufactured by GeneSiC Semiconductor. It integrates a Silicon Carbide freewheeling diode with an IGBT utilizing Optimal Punch Through (OPT) technology. The device features a collector-emitter voltage of 1200 V, a DC collector current of 100 A at 130 °C, and a peak collector current of 200 A. The SiC diode supports a DC forward current of 100 A at 130 °C. Thermal resistance from junction to case is 0.08 °C/W for the IGBT and 0.53 °C/W for the SiC diode. The module operates within a junction temperature range of -40 to +175 °C and provides an isolation voltage of 3000 V.
Feature Summary
- Integrates a high-speed Silicon Carbide freewheeling diode with an IGBT in a single package
- Utilizes Optimal Punch Through (OPT) technology for optimized switching performance
- Features positive temperature coefficient characteristics to facilitate easy paralleling
- Provides industry-leading Reverse Bias Safe Operating Area (RBSOA) and Short Circuit SOA (SCSOA) capabilities
Applications
- Solar Inverters
- Server Power Supplies
- Resonant Inverters operating above 100 kHz
- Inductive Heating systems
- Electronic Welders
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific revision matches the required electrical characteristics, as datasheet updates may occur. Ensure thermal interface materials and mounting torque specifications align with system requirements to maintain optimal heat dissipation and mechanical integrity during operation.
Selection Notes
Select this module for applications requiring high-frequency switching and elevated temperature tolerance. The integrated SiC diode reduces reverse recovery losses compared to standard silicon alternatives. Evaluate the 1200 V rating against system bus voltages and ensure adequate gate drive capabilities to manage the specified turn-on and turn-off times effectively under varying load conditions.
Part Context
This component belongs to the GeneSiC Semiconductor IGBT/SiC Diode Co-pack series. It represents a second-generation release, superseding the GA100XCP12-227 model. The product line focuses on combining advanced SiC rectifier technology with robust IGBT switching elements to improve circuit efficiency and reduce overall system size in power conversion applications.
Replacement Considerations
The datasheet identifies the GA100XCP12-227 as the predecessor part number superseded by this model. Verify pinout compatibility and thermal resistance values when transitioning between these revisions to ensure proper integration into existing designs without requiring significant layout modifications.
